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  • As the substrate 1 of the light emitting device 1, provided that it is a substrate on the surface of which Group III nitride semiconductor crystals can be epitaxially grown, there may be used, without particular limitation, a substrate constituted by materials such as sapphire, SiC, silicon, zinc oxide, magnesium oxide, magnesium oxide, zirconium dioxide, iron zinc manganese oxide, magnesium alumi
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