ting of F2 laser beam, Kr2 laser beam, ArKr laser beam and Ar2 laser beam and developing said resist film after the pattern exposure: General Formula 11: General Formula 12: wherein R0 is an alkyl group; R2 is a group that is decomposed by an acid; R3 and R4 are the same or different and selected from the group consisting of hydrogen and compounds including hydrogen and carbon; at least one of R5