An embodiment of a method for fabricating the memory device 100 from FIG. 1A is shown in FIGS. 2A-2H. Referring first to FIG. 2A, a substrate 102 is provided and a dielectric layer 128 is deposited on top of the substrate 102 to form the structure 200A shown in FIG. 2A. The dielectric layer 128 may be a dielectric material such as silicon dioxide SiO2 which may be deposited by means such as chemic