The amount of nitrogen incorporated into the oxide may be chosen such that the leakage current in the oxide film is minimized. [0024] In an exemplary embodiment, layer 103 is formed by epitaxially growing, by a process of molecular beam epitaxy, a layer of MnOm???xNx (x<m), wherein M is a metallic or semi-metallic element or combination of metallic and/or semi-metallic elements, such as, for examp