In one embodiment of the present invention, the substrate is a misoriented substrate; the at least one compound semiconductor layer includes an active layer, an n-AlGaInP cladding layer and p-AlGaInP cladding layer, the n-AlGaInP cladding layer and the p-AlGaInP cladding layer interposing the active layer; and the ridge stripe contains the p-AlGaInP layer.