{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/105171234"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "For example, a substrate surface on which processing may be performed include materials such as monocrystalline, polycrystalline or amorphous silicon, strained silicon, silicon on insulator (SOI), doped silicon, silicon germanium, germanium, gallium arsenide, glass, sapphire, silicon oxide, silicon nitride, silicon oxynitride, and/or a silicon carbide oxide material or a carbon doped silicon oxide" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.co.uk" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/140839011"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/105171234" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/45356711"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/105171234"] } } }
