{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/126574507"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "Compared to conventional silicon-based power devices, GaN-based power devices feature characteristics such as lower on-resistance and the ability to perform high-frequency operations." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "phys.org" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/124641844"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/126574507"] } } }
