{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/133954909"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "oxide isolation regions can be directly formed by a thermal oxidation of a silicon wafer with an oxidation barrier such as silicon nitride (&quot;nitride&quot;) masking off areas which will eventually contain transistors, substrate resistors, and other elements." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "docstoc.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/219103191"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/133954909"] } } }
