{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/140373663"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "In the method of forming a silicon oxide film according to the first or second aspect of the present invention, the water vapor may be in a state where it is entrained by oxygen gas, air or inert gas such as nitrogen gas, argon gas, helium gas or the like when the water vapor is introduced into the process chamber." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/281590172"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/140373663" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/281611018"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/140373663"] } } }
