{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/143947886"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "Transistors, capacitors, and other devices may include dielectric films containing a layer of a hafnium silicon oxynitride compound structured as one or more monolayers with a tantalum electrode, a titanium nitride electrode, or an electrode having a combination of a tantalum and a titanium nitride, the tantalum and titanium nitride structured as one or more monolayers." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.fr" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/137763992"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/143947886"] } } }
