{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/149144193"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "In this case the second layer of polysilicon is used for an additional layer of interconnect, or for forming passive devices such as resistors or capacitors, or for forming diodes and isolated MOS transistors, in addition to being used to dope and to electrically contact regions of the MOS-gated devices." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/137763995"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/149144193" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/478444325"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/149144193"] } } }
