{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/206149046"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ ".Apparatus for improving the performance of a temperature-sensitive etch processUS6093332 *4 Feb 199825 Jul 2000Lam Research CorporationFlowing etchant source gas into plasma processing chamber, gas including fluorocarbon and nonreactive gases, providing radio frequency power wave form to electrode associated with plasma processing chamber, forming plasma, depositing polymerUS6146979 *19 Feb 19981" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.es" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/55243055"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/206149046"] } } }
