{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/prov/140447274"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/235505188" ] } },

    { "id" : "http://webisa.webdatacommons.org/235505188"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "In addition, in the case where the cross point-type memory cells have configurations that do not include a diode., buffer layers 73 a to 73 d may be formed of a conductive material such as tantalum (Ta) or titanium (Ti)." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/140599667"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/235505188"] } } }
