{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/380802211"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "asma processing with less damageUS5983828Oct 8, 1996Nov 16, 1999Mattson Technology, Inc.Apparatus and method for pulsed plasma processing of a semiconductor substrateUS6093332Feb 4, 1998Jul 25, 2000Lam Research CorporationFlowing etchant source gas into plasma processing chamber, gas including fluorocarbon and nonreactive gases, providing radio frequency power wave form to electrode associated wit" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/55243055"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/380802211"] } } }
