{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/405704673"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "The optional barrier layer is formed utilizing conventional deposition processes such as those mentioned above and the optional barrier layer may be composed of a material such as SiN, TaN, TaSiN, WN, TaSi2 and other like materials that can prevent diffusion of a conductive material therethrough." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/330439232"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/405704673" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/140819547"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/405704673"] } } }
