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PrefixNamespace IRI
n4google.
isaphttp://webisa.webdatacommons.org/prov/
isahttp://webisa.webdatacommons.org/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
provhttp://www.w3.org/ns/prov#
xsdhhttp://www.w3.org/2001/XMLSchema#
Subject Item
isa:1210181
rdf:type
prov:Entity
prov:value
A semiconductor device including a bulk N-type transistor and an isolated P-type transistor formed in a P-type semiconductor substrate comprising:an N-type conductor overlying a central portion of an active region of said substrate, said N-type conductor being separated from said active region by a thin dielectric layer, wherein said N-type conductor and said dielectric layer overlie a first condu
prov:wasQuotedFrom
n4:com
Subject Item
isap:253619806
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isa:1210181