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n4google.com.
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Subject Item
isa:127842345
rdf:type
prov:Entity
prov:value
It is an advantage of the foregoing and other aspects of the present invention that high selectivity, low ion damage, good etch rate (e.g., 200 to 1,000 angstroms per minute) and good uniformity may be achieved in a simultaneous two-sided etch process.
prov:wasQuotedFrom
n4:au
Subject Item
isap:134882004
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isa:127842345