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In recent years, however, it has been proposed to form the insulating films from materials having more excellent insulating properties, such as metal oxides, e.g., tantalum oxide (Ta2O5), or high-dielectric or ferroelectric bodies containing two metal elements or more, e.g., (Ba,Sr)TiO3, i.e., BST. These films can be formed by means of MOCVD, i.e., using vaporized metal organic compounds.
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