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It would be a substantial advance in the art to utilize substrates such as sapphire, on which (Ga,Al,In)N could be reliably and reproducibly grown with a substantially reduced defect density, as compared for example to the defect levels which are typically achieved by growth of epitaxial layers of GaN on sapphire, by molecular beam epitaxy (MBE), metal-organic vapor phase epitaxy (MOVPE), and prio
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