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In one or more embodiments, the S/D region 268 implant for the PMOS FinFET can include doping S/D regions 268 with a p-type dopant such as boron (B) using an ion implantation at a dose of approximately 5???1015 atoms/cm2 to form a p-type doping concentration of approximately 2???1020 atoms/cm3 to a depth of approximately 35 nm.
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