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ional wear on the surface during subsequent use in molding equipment. [0024] Generally, a plasma reactive ion etching system employs a gas such as oxygen (O2), chlorine (Cl2), hydrochloric acid (HCl), fluorocarbons (e.g., Freong, CF4, CHF3, and the like), nitrogen (N2), nitrogen oxide (N2O), argon (Ar), boron trichloride (BCl3), hydrogen (H2), sulfur hexafluoride (SF6), and the like, as well as io
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