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In this embodiment, if third insulation layer 25 issubstantially non-oxidizable, such as a nitride of the semiconductive material (i.e., silicon nitride is effective as it is non-receptive to oxidation) and is chemically different than the first insulation layer and the (nitride) lining of first trench24 will prevent further oxidation of the semiconductive material about the wall of the first tren
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