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, 2010Intel CorporationSelective deposition of a dielectric on a self-assembled monolayer-adsorbed metalUS8120114Dec 27, 2006Feb 21, 2012Intel CorporationTransistor having an etch stop layer including a metal compound that is selectively formed over a metal gateUS8399317Oct 14, 2011Mar 19, 2013Intel CorporationTransistor having an etch stop layer including a metal compound that is selectively form
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