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rface area) electrode from Ti and TiN, capacitors and semiconductor devices including sameUS6613240Dec 1, 2000Sep 2, 2003Epion CorporationMethod and apparatus for smoothing thin conductive films by gas cluster ion beamUS6617250Sep 13, 2002Sep 9, 2003Micron Technology, Inc.Methods of depositing a layer comprising tungsten and methods of forming a transistor gate lineUS6649466Sep 13, 2002Nov 18, 200
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