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isa:331956655
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Further, as the material of the gate wiring 1004, provided that there is a structure having at least one material layer containing as its main constituent: a material having a conductive material or a semiconductor conductor material as its main constituent; a high melting point metallic material, for example, such as Ta (tantalum), Mo (molybdenum), Ti (titanium), W (tungsten), and chromium (Cr);
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n4:fr
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isap:29576527
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isa:331956655