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55215Dec 6, 2004Apr 8, 2008Cree, Inc.Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequenciesUS7361946Jun 28, 2004Apr 22, 2008Nitronex CorporationSemiconductor device-based sensorsUS7365374May 3, 2005Apr 29, 2008Nitronex CorporationGallium nitride material structures including substrates and methods associated with the sameUS7378684Jul 12, 2002May 27, 2008North
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