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Unless specifically indicated otherwise, all materials, dimensions and other parameters are identical for the multiple transistor example of FIGS. 10A-H as for the individual transistor embodiment of FIGS. 2A-B and 3A-3F. So, the wafer in FIGS. 10A and 10B, includes a semiconductor base layer 200, preferably silicon, an oxide layer 202 on the base layer 200 and a surface nitride layer 204.
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