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Alternatively, the gate dielectric layer 50 and 50??? may be formed of an insulating material such as silicon oxide, hafnium oxide, zirconium oxide, aluminum oxide, or silicon oxide, and may be deposited or coated using atomic layer deposition (ALD), CVD, plasma-enhanced ALD (PEALD), or PE-CVD. Subsequently, a gate conductive layer (not shown) is formed on the gate dielectric layer 50 and 50???.
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