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aser in a predetermined patternUS812011427 Dec 200621 Feb 2012Intel CorporationTransistor having an etch stop layer including a metal compound that is selectively formed over a metal gateUS83236379 Apr 20094 Dec 2012Massachusetts Institute Of TechnologySynthetically functionalized living cellsUS839931714 Oct 201119 Mar 2013Intel CorporationTransistor having an etch stop layer including a metal com
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