<http://webisa.webdatacommons.org/104845180>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .
<http://webisa.webdatacommons.org/prov/333054532>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/104845180> .
<http://webisa.webdatacommons.org/prov/332667360>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/104845180> .
<http://webisa.webdatacommons.org/104845180>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/104845180>	<http://www.w3.org/ns/prov#value>	"FIGS. 4A and 4B are a sectional view and plan view showing the vicinity of a dummy wire of the semiconductor device according to the first embodiment;" .
<http://webisa.webdatacommons.org/prov/333932847>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/104845180> .
<http://webisa.webdatacommons.org/prov/334106574>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/104845180> .