. "To this end, following the removal of the masking blocks 208 a, 208 b, 208 c, and the layer 235, a dielectric gate material, for example HfO2, may be first deposited in the holes 210, 212, 214, 216, then at least one gate material, comprising for example at least one metallic material such as TiN and/or at least one semi-conductor material such as polysilicium, which may be highly doped, for examp" . . .