<http://webisa.webdatacommons.org/117807668>	<http://www.w3.org/ns/prov#value>	"After the island-shaped semiconductor regions' 315 and 316 are formed, a mask 318 is formed covering portions except for regions which subsequently become source or drain regions 321 of a TFT 301 and source or drain regions 322 of a TFT 302 to introduce an impurity imparting one conductivity type (see FIG. 27D)." .
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