<http://webisa.webdatacommons.org/119672834>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.ca> .
<http://webisa.webdatacommons.org/prov/7800826>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/119672834> .
<http://webisa.webdatacommons.org/prov/367806830>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/119672834> .
<http://webisa.webdatacommons.org/119672834>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/91657184>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/119672834> .
<http://webisa.webdatacommons.org/119672834>	<http://www.w3.org/ns/prov#value>	"More particularly, the present invention provides a method and structure for manufacture of photovoltaic materials using a thin film process including Group IV materials (e.g., silicon, germanium) and metal oxides, such as copper oxide and the like." .