<http://webisa.webdatacommons.org/121012655>	<http://www.w3.org/ns/prov#value>	"It had previously been noted that the present apparatus differs from a low pressure CVD apparatus (LPCVD) in that the present apparatus can be used to deposit epitaxial silicon films, while LPCVD systems have always been used to deposit polycrystalline or amorphous silicon, or insulating layers such as silicon nitride." .
<http://webisa.webdatacommons.org/prov/36263077>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/121012655> .
<http://webisa.webdatacommons.org/prov/430722556>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/121012655> .
<http://webisa.webdatacommons.org/121012655>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.fr> .
<http://webisa.webdatacommons.org/121012655>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .