<http://webisa.webdatacommons.org/prov/450414109>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/12890422> .
<http://webisa.webdatacommons.org/prov/450404838>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/12890422> .
<http://webisa.webdatacommons.org/prov/332731186>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/12890422> .
<http://webisa.webdatacommons.org/12890422>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/333837472>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/12890422> .
<http://webisa.webdatacommons.org/12890422>	<http://www.w3.org/ns/prov#value>	"FIGS. 3A and 3B are a top view and a cross-sectional side view, respectively, of the semiconductor construction 100 according to various embodiments of the invention." .
<http://webisa.webdatacommons.org/12890422>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<freshpatents.com> .