<http://webisa.webdatacommons.org/prov/450297227>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/12890423> .
<http://webisa.webdatacommons.org/12890423>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<freshpatents.com> .
<http://webisa.webdatacommons.org/12890423>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/333054524>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/12890423> .
<http://webisa.webdatacommons.org/12890423>	<http://www.w3.org/ns/prov#value>	"FIGS. 4A and 4B are a top view and a cross-sectional side view, respectively, of the semiconductor construction 100 according to various embodiments of the invention." .
<http://webisa.webdatacommons.org/prov/450392748>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/12890423> .