<http://webisa.webdatacommons.org/132306315>	<http://www.w3.org/ns/prov#value>	"The invention is a product and method for forming same comprising a storage contact capacitor of a dynamic random access memory (DRAM) device wherein the lower storage node capacitor plate comprises tungsten and TiN portions." .
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<http://webisa.webdatacommons.org/prov/137300573>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/132306315> .
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