<http://webisa.webdatacommons.org/prov/398885787>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/140176961> .
<http://webisa.webdatacommons.org/prov/137763992>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/140176961> .
<http://webisa.webdatacommons.org/140176961>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/140176961>	<http://www.w3.org/ns/prov#value>	"Unwanted energy states may impair the electrical properties of material near the SiO2/SiC interface and may reduce the performance of electronic devices that incorporate such interfaces, such as MOSFETs, capacitors and other devices." .
<http://webisa.webdatacommons.org/140176961>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .