. . " silicide or n-type impurities are doped at high concentration while being separated from each other around the gate electrodes 26. [0060] A data line assembly is formed on the ohmic contact layers 55 and 56 as well as on the gate insulating layer 30 with a metallic or conductive material such as aluminum Al, aluminum alloy, molybdenum Mo, molybdenum-tungsten alloy MoW, chrome Cr, and tantalum Ta." . . . . .