<http://webisa.webdatacommons.org/162324798>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/162324798>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com.au> .
<http://webisa.webdatacommons.org/prov/104273885>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/162324798> .
<http://webisa.webdatacommons.org/162324798>	<http://www.w3.org/ns/prov#value>	"Next, as shown in FIGS. 11A and 11B, after the second resist layer 15 b is removed, the protection layer 23 formed of a resist material such as a solder resist is formed on the back surface of the semiconductor substrate 10 so as to cover the substrate 10." .