<http://webisa.webdatacommons.org/prov/285783224>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/169360444> .
<http://webisa.webdatacommons.org/169360444>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .
<http://webisa.webdatacommons.org/169360444>	<http://www.w3.org/ns/prov#value>	"According to an example embodiment of the present invention, a thyristor-based semiconductor device, such as a memory cell using a TCCT, is manufactured in a manner that includes forming a portion of the device extending from a substrate surface." .
<http://webisa.webdatacommons.org/169360444>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .