<http://webisa.webdatacommons.org/186973075>	<http://www.w3.org/ns/prov#value>	"For formation of silicon nitride film, SiF.sub.4, SiH.sub.2 Cl.sub.2, or Si.sub.2 F.sub.6 can be used, and in this case, one or more kinds of gases selected from the group consisting of SiF.sub.4, SiH.sub.2 Cl.sub.2, and Si.sub.2 F.sub.6 are" .
<http://webisa.webdatacommons.org/prov/127781702>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/186973075> .
<http://webisa.webdatacommons.org/186973075>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/186973075>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<patents.com> .