<http://webisa.webdatacommons.org/192847635>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .
<http://webisa.webdatacommons.org/prov/397891953>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/192847635> .
<http://webisa.webdatacommons.org/192847635>	<http://www.w3.org/ns/prov#value>	"The present invention relates to semiconductor devices and fabrication methods thereof, and particularly to silicon-on insulator (SOI) devices and methods for fabricating the same." .
<http://webisa.webdatacommons.org/192847635>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/387627640>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/192847635> .