<http://webisa.webdatacommons.org/prov/396589688>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/193145302> .
<http://webisa.webdatacommons.org/193145302>	<http://www.w3.org/ns/prov#value>	"The present invention is directed generally to a semiconductor device and method of manufacture thereof, and more particularly to such a device and method having a thin gate oxide." .
<http://webisa.webdatacommons.org/prov/387628577>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/193145302> .
<http://webisa.webdatacommons.org/193145302>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/193145302>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .
<http://webisa.webdatacommons.org/prov/397891953>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/193145302> .