<http://webisa.webdatacommons.org/prov/272082044>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/211990772> .
<http://webisa.webdatacommons.org/211990772>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/211990772>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<freshpatents.com> .
<http://webisa.webdatacommons.org/prov/304744075>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/211990772> .
<http://webisa.webdatacommons.org/211990772>	<http://www.w3.org/ns/prov#value>	"Wherein a film may be formed as the gate insulating layer by chemical vapor deposition, coating or other method;" .