<http://webisa.webdatacommons.org/216738148>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.de> .
<http://webisa.webdatacommons.org/prov/152086270>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/216738148> .
<http://webisa.webdatacommons.org/216738148>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/216738148>	<http://www.w3.org/ns/prov#value>	"The memory cell of which the present invention is a part can be configured such a layout, with bit line 108 forming the top level of the phase change memory element and the word line (not shown) lying perpendicular to the bit line." .