<http://webisa.webdatacommons.org/prov/235688353>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/229083283> .
<http://webisa.webdatacommons.org/229083283>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .
<http://webisa.webdatacommons.org/prov/246706975>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/229083283> .
<http://webisa.webdatacommons.org/229083283>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/229083283>	<http://www.w3.org/ns/prov#value>	"FIGS. 11A and 11B are a plan view and a sectional diagram for explaining a fourth mask process in the fabricating method of the thin film transistor substrate according to an embodiment of the present invention." .
<http://webisa.webdatacommons.org/prov/234531106>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/229083283> .
<http://webisa.webdatacommons.org/prov/251483955>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/229083283> .