<http://webisa.webdatacommons.org/prov/396589680>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/237319839> .
<http://webisa.webdatacommons.org/237319839>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .
<http://webisa.webdatacommons.org/237319839>	<http://www.w3.org/ns/prov#value>	"Part of the present invention, which relates to separation of element formation regions by field oxide films and oxide film buried layers, can also be applied to semiconductor devices other than the memory devices." .
<http://webisa.webdatacommons.org/237319839>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .