<http://webisa.webdatacommons.org/prov/450377406>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/239090512> .
<http://webisa.webdatacommons.org/239090512>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/334397315>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/239090512> .
<http://webisa.webdatacommons.org/prov/333020143>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/239090512> .
<http://webisa.webdatacommons.org/239090512>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .
<http://webisa.webdatacommons.org/239090512>	<http://www.w3.org/ns/prov#value>	"FIGS. 9A and 9B are a plan view and a cross sectional view, respectively, collectively showing the manufacturing process of the semiconductor device according to the first embodiment of the present invention;" .
<http://webisa.webdatacommons.org/prov/450410887>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/239090512> .