<http://webisa.webdatacommons.org/242241286>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.es> .
<http://webisa.webdatacommons.org/242241286>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/412209628>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/242241286> .
<http://webisa.webdatacommons.org/242241286>	<http://www.w3.org/ns/prov#value>	"In alternative implementations consistent with the present invention, substrate 110 and layer 130 may include other semiconducting materials, such as germanium, or combinations of semiconducting materials, such as silicon-germanium." .